Growth process and magnetic anisotropy of amorphous Lax Zny Oz nanowire arrays

• Published in: Micro & nano letters Vol. 9; no. 4; pp. 222 - 224
• Main Authors: Wang, Fang‐Kuo, Yuan, Xiao‐You
• Format: Journal Article
• Language: English
• Published: The Institution of Engineering and Technology 01.04.2014
• Subjects: amorphous magnetic materials; amorphous nanowire array fabrication; chemical coprecipitation; coercive force; energy dispersive X‐ray spectroscopy; hysteresis loops; lanthanum compounds; LaxZnyOz; magnetic anisotropy; magnetic hysteresis; magnetisation; morphological property; nanofabrication; nanomagnetics; nanowire array diameters; nanowire array growth process; nanowire arrays; nanowires; porous anodic aluminium oxide template; porous materials; potential applications; pressure 1 atm; saturation magnetisation; scanning electron microscopy; size 90 nm; structural property; subatmospheric pressure suction filtration; temperature 293 K to 298 K; transmission electron microscopy; ultra‐high‐density magnetic memory materials; X‐ray chemical analysis; X‐ray diffraction
• ISSN: 1750-0443; 1750-0443
• DOI: 10.1049/mnl.2014.0023

Amorphous Lax Zny Oz nanowire arrays with average diameters of 90 nm have been fabricated by chemical co‐precipitation under subatmospheric pressure suction filtration in porous anodic aluminium oxide template. The growth process of Lax Zny Oz nanowire arrays was investigated through scanning electron microscopy, and the morphology, structure and components of the nanowire arrays were characterised by transmission electron microscopy, X‐ray diffraction and energy dispersive X‐ray spectroscopy. The room temperature hysteresis loops of Lax Zny Oz nanowire arrays shows that the ratio of coercive force Hc (//)/Hc (⊥) achieved is about 13, and saturation magnetisation Ms (//)/Ms (⊥) is 1.3. The nanowire arrays possess obvious magnetic anisotropy arising from the shape anisotropy, and the easily magnetised direction is parallel to the axis of the nanowire arrays, which may determine potential applications on ultra‐high‐density magnetic memory material.