Broadband Photodetection: 2D Silicon‐Based Semiconductor Si2Te3 toward Broadband Photodetection (Small 13/2021)

In article number 2006496, Liang Li, Guanghai Li, and co‐workers synthesize silicon‐based semiconductor Si2Te3 crystals using a chemical vapor deposition technique. The combined features of silicon and layered structure bridge the 2D materials family and silicon‐based materials family together, whil...

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Bibliographic Details
Published inSmall (Weinheim an der Bergstrasse, Germany) Vol. 17; no. 13
Main Authors Chen, Jiawang, Tan, Chaoyang, Li, Gang, Chen, Lijie, Zhang, Hanlin, Yin, Shiqi, Li, Ming, Li, Liang, Li, Guanghai
Format Journal Article
LanguageEnglish
Published 01.04.2021
Subjects
2D materials
photodetector
Si 2Te 3
silicon based
transistor
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Summary:In article number 2006496, Liang Li, Guanghai Li, and co‐workers synthesize silicon‐based semiconductor Si2Te3 crystals using a chemical vapor deposition technique. The combined features of silicon and layered structure bridge the 2D materials family and silicon‐based materials family together, while the intrinsic defects in Si2Te3 yield ultrawide photoluminescence spectra and broadband spectral response from 405 nm up to 1064 nm.
ISSN:1613-6810
1613-6829
DOI:10.1002/smll.202170060