利用高阶DBR实现简单的2.0μm GaSb激光器

TN2; 利用高阶Bragg光栅成功制备出GaSb基DBR激光器,避免了复杂的制备工艺.利用标准接触曝光制备出16阶和24阶Bragg光栅以及双沟脊条波导结构.16阶Bragg光栅器件在室温下实现了SMSR高达17.5 dB的单模激光输出.CW状态下室温最大单模输出功率超过10 mW.随着注入电流变化,器件表现出出色的波长稳定性.在整个注入电流范围内,器件都保持单横模工作状态.24阶Bragg光栅器件室温SMSR为22.5 dB.器件的激射波长都在2.0 μm左右....

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Published in红外与毫米波学报 Vol. 37; no. 6; pp. 653 - 656
Main Authors 黄书山, 杨成奥, 张宇, 谢圣文, 廖永平, 柴小力, 徐应强, 牛智川
Format Journal Article
LanguageChinese
Published 中国科学院大学材料科学与光电技术学院,北京100049 2018
中国科学院半导体研究所超晶格与微结构国家重点实验室,北京100083
Subjects
quantum well
laser diodes
激光二极管
infrared
红外
量子阱
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Abstract TN2; 利用高阶Bragg光栅成功制备出GaSb基DBR激光器,避免了复杂的制备工艺.利用标准接触曝光制备出16阶和24阶Bragg光栅以及双沟脊条波导结构.16阶Bragg光栅器件在室温下实现了SMSR高达17.5 dB的单模激光输出.CW状态下室温最大单模输出功率超过10 mW.随着注入电流变化,器件表现出出色的波长稳定性.在整个注入电流范围内,器件都保持单横模工作状态.24阶Bragg光栅器件室温SMSR为22.5 dB.器件的激射波长都在2.0 μm左右.
AbstractList TN2; 利用高阶Bragg光栅成功制备出GaSb基DBR激光器,避免了复杂的制备工艺.利用标准接触曝光制备出16阶和24阶Bragg光栅以及双沟脊条波导结构.16阶Bragg光栅器件在室温下实现了SMSR高达17.5 dB的单模激光输出.CW状态下室温最大单模输出功率超过10 mW.随着注入电流变化,器件表现出出色的波长稳定性.在整个注入电流范围内,器件都保持单横模工作状态.24阶Bragg光栅器件室温SMSR为22.5 dB.器件的激射波长都在2.0 μm左右.
Abstract_FL GaSb-based DBR lasers with high-order Bragg gratings are fabricated without complex process.The 16th-order and 24th-order Bragg gratings are fabricated with double-trench ridge waveguide by using standard contact optical lithography respectively.The 16th-order Bragg grating laser achieves single longitudinal mode continuous-wave (CW) operation at room temperature with side mode suppression ratio (SMSR) as high as 17.5 dB.The maximum single mode continuous-wave output power is more than 10 mW at room temperature.The laser shows a very excellent wavelength stability against injection current.The single spatial mode operation is maintained in the entire injection current range.The 24th-order Bragg grating laser even shows a side mode suppression ratio up to 22.5 dB at room temperature.The emission wavelength is around 2.0 μm.
Author 廖永平
柴小力
黄书山
徐应强
牛智川
张宇
杨成奥
谢圣文
AuthorAffiliation 中国科学院半导体研究所超晶格与微结构国家重点实验室,北京100083;中国科学院大学材料科学与光电技术学院,北京100049
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Author_FL YANG Cheng-Ao
ZHANG Yu
NIU Zhi-Chuan
CHAI Xiao-Li
LIAO Yong-Ping
HUANG Shu-Shan
XIE Sheng-wen
XU Ying-Qiang
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DocumentTitle_FL A simple approach to obtain 2.0 μm GaSb laser by using high-order distributed Bragg reflector
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Keywords quantum well
laser diodes
激光二极管
infrared
红外
量子阱
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中国科学院半导体研究所超晶格与微结构国家重点实验室,北京100083
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Snippet TN2; 利用高阶Bragg光栅成功制备出GaSb基DBR激光器,避免了复杂的制备工艺.利用标准接触曝光制备出16阶和24阶Bragg光栅以及双沟脊条波导结构.16阶Bragg光栅器件在室温下实现了SMSR高达17.5 dB的单模激光输出.CW状态下室温最大单模输出功率超过10...
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Title 利用高阶DBR实现简单的2.0μm GaSb激光器
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