尹甲运, 吕元杰, 宋旭波, 谭鑫, 张志荣, 房玉龙, . . . 蔡树军. (2017). 基于再生长欧姆接触工艺的220GHz InAlN/GaN场效应晶体管. 红外与毫米波学报, 36(1), 6-34. https://doi.org/10.11972/j.issn.1001-9014.2017.01.002
Chicago Style (17th ed.) Citation尹甲运, 吕元杰, 宋旭波, 谭鑫, 张志荣, 房玉龙, 冯志红, and 蔡树军. "基于再生长欧姆接触工艺的220GHz InAlN/GaN场效应晶体管." 红外与毫米波学报 36, no. 1 (2017): 6-34. https://doi.org/10.11972/j.issn.1001-9014.2017.01.002.
MLA (9th ed.) Citation尹甲运, et al. "基于再生长欧姆接触工艺的220GHz InAlN/GaN场效应晶体管." 红外与毫米波学报, vol. 36, no. 1, 2017, pp. 6-34, https://doi.org/10.11972/j.issn.1001-9014.2017.01.002.
Warning: These citations may not always be 100% accurate.