吕元杰, 冯志红, 张志荣, 宋旭波, 谭鑫, 郭红雨, . . . 蔡树军. (2016). 基于60 nm T型栅fT & fmax为170 & 210 GHz的InAlN/GaN HFETs器件. 红外与毫米波学报, 35(6), 641-645. https://doi.org/10.11972/j.issn.1001-9014.2016.06.001
Chicago Style (17th ed.) Citation吕元杰, 冯志红, 张志荣, 宋旭波, 谭鑫, 郭红雨, 尹甲运, 房玉龙, and 蔡树军. "基于60 Nm T型栅fT & Fmax为170 & 210 GHz的InAlN/GaN HFETs器件." 红外与毫米波学报 35, no. 6 (2016): 641-645. https://doi.org/10.11972/j.issn.1001-9014.2016.06.001.
MLA (9th ed.) Citation吕元杰, et al. "基于60 Nm T型栅fT & Fmax为170 & 210 GHz的InAlN/GaN HFETs器件." 红外与毫米波学报, vol. 35, no. 6, 2016, pp. 641-645, https://doi.org/10.11972/j.issn.1001-9014.2016.06.001.
Warning: These citations may not always be 100% accurate.