DC-30GHz GaAs pHEMT分布式功率放大器设计

TN432; 采用0.25 μm GaAs pHEMT工艺研制了一款分布式功率放大器,详细介绍了电路设计和优化过程.通过增加低频交流终端,使得该放大器低频段的增益平坦度有明显的改善.仿真结果表明该放大器带宽约为30 GHz,小信号增益约为8.5 dB,1 dB压缩点输出功率约为21 dBm,功率附加效率最高能达到20%以上....

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Published in电子技术应用 Vol. 44; no. 10; pp. 48 - 55
Main Authors 刘雁鹏, 魏启迪, 章国豪
Format Journal Article
LanguageChinese
Published 广东工业大学 信息工程学院,广东广州,510006 2018
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Abstract TN432; 采用0.25 μm GaAs pHEMT工艺研制了一款分布式功率放大器,详细介绍了电路设计和优化过程.通过增加低频交流终端,使得该放大器低频段的增益平坦度有明显的改善.仿真结果表明该放大器带宽约为30 GHz,小信号增益约为8.5 dB,1 dB压缩点输出功率约为21 dBm,功率附加效率最高能达到20%以上.
AbstractList TN432; 采用0.25 μm GaAs pHEMT工艺研制了一款分布式功率放大器,详细介绍了电路设计和优化过程.通过增加低频交流终端,使得该放大器低频段的增益平坦度有明显的改善.仿真结果表明该放大器带宽约为30 GHz,小信号增益约为8.5 dB,1 dB压缩点输出功率约为21 dBm,功率附加效率最高能达到20%以上.
Author 刘雁鹏
章国豪
魏启迪
AuthorAffiliation 广东工业大学 信息工程学院,广东广州,510006
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Author_FL Wei Qidi
Liu Yanpeng
Zhang Guohao
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  fullname: 刘雁鹏
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  fullname: 魏启迪
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  fullname: 章国豪
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DocumentTitle_FL The design of a DC-30 GHz GaAs pHEMT distributed power amplifier
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Snippet TN432; 采用0.25 μm GaAs pHEMT工艺研制了一款分布式功率放大器,详细介绍了电路设计和优化过程.通过增加低频交流终端,使得该放大器低频段的增益平坦度有明显的改善.仿真结果表明该放大器带宽约为30 GHz,小信号增益约为8.5 dB,1 dB压缩点输出功率约为21...
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Title DC-30GHz GaAs pHEMT分布式功率放大器设计
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