Deep wordline trench to shield cross coupling between adjacent cells for scaled NAND

A NAND flash memory structure with a wordline or control gate that provides shielding from Yupin effect errors and generally from potentials in adjacent strings undergoing programming operations with significant variations in potential.

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Bibliographic Details
Main Authors Chien, Henry, Fong, Yupin
Format Patent
LanguageEnglish
Published 29.05.2012
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Summary:A NAND flash memory structure with a wordline or control gate that provides shielding from Yupin effect errors and generally from potentials in adjacent strings undergoing programming operations with significant variations in potential.