Wafer temporary bonding method using silicon direct bonding

A wafer temporary bonding method using silicon direct bonding (SDB) may include preparing a carrier wafer and a device wafer, adjusting roughness of a surface of the carrier wafer, and combining the carrier wafer and the device wafer using the SDB. Because the method uses SDB, instead of an adhesive...

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Bibliographic Details
Main Authors Kim, Jung-ho, Bae, Dae-lok, Lee, Jong-wook, Choi, Seung-woo, Kang, Pil-kyu
Format Patent
LanguageEnglish
Published 01.01.2013
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Summary:A wafer temporary bonding method using silicon direct bonding (SDB) may include preparing a carrier wafer and a device wafer, adjusting roughness of a surface of the carrier wafer, and combining the carrier wafer and the device wafer using the SDB. Because the method uses SDB, instead of an adhesive layer, for a temporary bonding process, a module or process to generate and remove an adhesive is unnecessary. Also, a defect in a subsequent process, for example, a back-grinding process, due to irregularity of the adhesive may be prevented.