Nonvolatile memory devices that utilize dummy word line segments to inhibit dishing during fabrication

A NAND flash memory device includes a plurality of continuous conductors disposed on a common level of a multilayer substrate, the plurality of continuous conductors including respective conductive lines extending in parallel along a first direction, respective contact pads disposed at ends of the r...

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Bibliographic Details
Main Authors Park, Jang-ho, Park, Jae-kwan, Kwak, Dong-hwa, Jin, So-wi, Hwang, Byung-jun, Lim, Nam-su
Format Patent
LanguageEnglish
Published 25.12.2012
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Summary:A NAND flash memory device includes a plurality of continuous conductors disposed on a common level of a multilayer substrate, the plurality of continuous conductors including respective conductive lines extending in parallel along a first direction, respective contact pads disposed at ends of the respective conductive lines and respective conductive dummy lines extending in parallel from the contact pads along a second direction.