Semiconductor device and method for fabricating the same

A capacitor includes a lower electrode, a dielectric layer, an upper electrode, and a ruthenium oxide layer. At least one of the lower electrode and the upper electrode is formed of a ruthenium layer, and the ruthenium oxide layer is disposed next to the ruthenium layer.

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Bibliographic Details
Main Authors Do, Kwan-Woo, Roh, Jae-Sung, Lee, Kee-Jeung, Kil, Deok-Sin, Kim, Young-Dae, Kim, Jin-Hyock, Park, Kyung-Woong, Song, Han-Sang
Format Patent
LanguageEnglish
Published 30.10.2012
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Summary:A capacitor includes a lower electrode, a dielectric layer, an upper electrode, and a ruthenium oxide layer. At least one of the lower electrode and the upper electrode is formed of a ruthenium layer, and the ruthenium oxide layer is disposed next to the ruthenium layer.