Disturb-free static random access memory cell

• Main Authors: Chuang, Ching-Te, Yang, Hao-I, Lin, Jihi-Yu, Yang, Shyh-Chyi, Tu, Ming-Hsien, Hwang, Wei, Jou, Shyh-Jye, Lee, Kun-Ti, Li, Hung-Yu
• Format: Patent
• Language: English
• Published: 04.09.2012

A disturb-free static random access memory cell includes: a latch circuit having a first access terminal and a second access terminal; a first switching circuit having a first bit transferring terminal coupled to the first access terminal, a first control terminal coupled to a first write word line,...