MOS semiconductor memory device having charge storage region formed from stack of insulating films

a aaa a. The invention provides a MOS semiconductor memory device that achieves excellent data retention characteristics while also achieving high-speed data write performance, low-power operation performance, and high reliability. A MOS semiconductor memory device includes a first insulating film a...

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Bibliographic Details
Main Authors Endoh, Tetsuo, Kohno, Masayuki, Nishita, Tatsuo, Honda, Minoru, Nakanishi, Toshio, Hirota, Yoshihiro
Format Patent
LanguageEnglish
Published 04.09.2012
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Summary:a aaa a. The invention provides a MOS semiconductor memory device that achieves excellent data retention characteristics while also achieving high-speed data write performance, low-power operation performance, and high reliability. A MOS semiconductor memory device includes a first insulating film and fifth insulating film having large bandgaps and , a third insulating film having the smallest bandgap , and a second insulating film and fourth insulating film interposed between the third insulating film and the first and fifth insulating films and , respectively, and having intermediate bandgaps and