High resistivity silicon wafers

17 3 7 3 16 3 13 3 Disclosed are high resistivity silicon wafers, wherein the interstitial oxygen concentration thereof is 8×10atoms/cm(ASTM F121-1979) or less, BMD (Bulk Micro Defect) density-oxygen precipitate within wafer-is 5×10pieces/cmor less, and an electric resistivity thereof is 100 Ω·cm or...

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Bibliographic Details
Main Authors Sadamitsu, Shinsuke, Hourai, Masataka
Format Patent
LanguageEnglish
Published 28.08.2012
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Summary:17 3 7 3 16 3 13 3 Disclosed are high resistivity silicon wafers, wherein the interstitial oxygen concentration thereof is 8×10atoms/cm(ASTM F121-1979) or less, BMD (Bulk Micro Defect) density-oxygen precipitate within wafer-is 5×10pieces/cmor less, and an electric resistivity thereof is 100 Ω·cm or more. And further disclosed are high resistivity silicon wafers having an electric resistivity of 100 Ω·cm or more, which are cut from crystal region where no COP (Crystal Originated Particle) exist, and in which neither COP (Crystal Originated Particle) nor oxygen precipitate exist at the area from wafer surface to the depth of 5 μm or more owing to high temperature treatment. It is preferable that, in said high resistivity wafers, carbon concentration in wafers is 1×10atoms/cmor more (ASTM F123-1981), and/or nitrogen concentration is 1×10atoms/cmor more. Accordingly, high resistivity silicon wafers are provided, wherein the mechanical strength thereof is highly secured, and an excellent characteristic to slip generation is provided, so as to be optimal for base wafers of silicon wafers having a SOI structure or an epitaxial structure.