Dual interlayer dielectric stressor integration with a sacrificial underlayer film stack

A method for making a semiconductor device is provided by (a) providing a substrate having first and second gate structures thereon; (b) forming an underlayer over the first and second gate structures; (c) removing the underlayer from the first gate structure; (d) forming a first stressor layer over...

Full description

Saved in:
Bibliographic Details
Main Authors Jawarani, Dharmesh, Noble, Ross E, Wang, David C
Format Patent
LanguageEnglish
Published 21.08.2012
Online AccessGet full text

Cover

More Information
Summary:A method for making a semiconductor device is provided by (a) providing a substrate having first and second gate structures thereon; (b) forming an underlayer over the first and second gate structures; (c) removing the underlayer from the first gate structure; (d) forming a first stressor layer over the first and second gate structures; and (e) selectively removing the first stressor layer from the second gate structure through the use of a first etch which is selective to the underlayer.