Composition and method for low temperature deposition of silicon-containing films

This invention relates to silicon precursor compositions for forming silicon-containing films by low temperature (e.g., <300° C.) chemical vapor deposition processes for fabrication of ULSI devices and device structures. Such silicon precursor compositions comprise at least one disilane derivativ...

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Bibliographic Details
Main Authors Wang, Ziyun, Xu, Chongying, Baum, Thomas H, Hendrix, Bryan C, Roeder, Jeffrey F
Format Patent
LanguageEnglish
Published 07.08.2012
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Summary:This invention relates to silicon precursor compositions for forming silicon-containing films by low temperature (e.g., <300° C.) chemical vapor deposition processes for fabrication of ULSI devices and device structures. Such silicon precursor compositions comprise at least one disilane derivative compound that is fully substituted with alkylamino and/or dialkylamino functional groups.