Method and system for tuning advanced process control parameters

A method of advanced process control (APC) for semiconductor fabrication is provided. The method includes providing a present wafer to be processed by a semiconductor processing tool, providing first data of previous wafers that have been processed by the semiconductor processing tool, decoupling no...

Full description

Saved in:
Bibliographic Details
Main Authors Tsen, Andy, Hsu, Chih-Wei, Hung, Ming-Yeon, Fan, Ming-Yu, Fei, Wang Jo, Mou, Jong-I
Format Patent
LanguageEnglish
Published 24.07.2012
Online AccessGet full text

Cover

More Information
Summary:A method of advanced process control (APC) for semiconductor fabrication is provided. The method includes providing a present wafer to be processed by a semiconductor processing tool, providing first data of previous wafers that have been processed by the semiconductor processing tool, decoupling noise from the first data to generate second data, evaluating an APC performance based on proximity of the second data to a target data, determining a control parameter based on the APC performance, and controlling the semiconductor processing tool with the control parameter to process the present wafer.