Light emitting device and method of manufacturing the same

Provided is a light emitting diode (LED) manufactured by using a wafer bonding method and a method of manufacturing a LED by using a wafer bonding method. The wafer bonding method may include interposing a stress relaxation layer formed of a metal between a semiconductor layer and a bonding substrat...

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Bibliographic Details
Main Authors Kim, Kyoung-kook, Chae, Su-hee, Park, Young-soo, Kim, Taek, Yang, Moon-seung, Jeong, Hyung-su, Park, Jae-chul, Kim, Jun-youn
Format Patent
LanguageEnglish
Published 17.07.2012
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Summary:Provided is a light emitting diode (LED) manufactured by using a wafer bonding method and a method of manufacturing a LED by using a wafer bonding method. The wafer bonding method may include interposing a stress relaxation layer formed of a metal between a semiconductor layer and a bonding substrate. When the stress relaxation layer is used, stress between the bonding substrate and a growth substrate may be offset due to the flexibility of metal, and accordingly, bending or warpage of the bonding substrate may be reduced or prevented.