Extended drain transistor and method of manufacturing the same
An extended drain transistor comprising a substrate, a gate formed on the substrate, the gate having a first side wall and a second side wall opposing the first side wall, an extended drain implanted in a surface portion of the substrate adjacent the second side wall of the gate, a spacer on the sec...
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| Main Authors | , |
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| Format | Patent |
| Language | English |
| Published |
10.07.2012
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| Online Access | Get full text |
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| Summary: | An extended drain transistor comprising a substrate, a gate formed on the substrate, the gate having a first side wall and a second side wall opposing the first side wall, an extended drain implanted in a surface portion of the substrate adjacent the second side wall of the gate, a spacer on the second side wall of the gate, a source implanted in a surface portion of the substrate adjacent the first side wall of the gate, and a drain implanted in a surface portion of the substrate adjacent the spacer in such a manner that the extended drain is arranged between the gate and the drain. |
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