Fast and accurate method to simulate intermediate range flare effects

A method is provided for modeling lithographic processes in the design of photomasks for the manufacture of semiconductor integrated circuits, and more particularly for simulating intermediate range flare effects. For a region of influence (ROI) from first ROI of about 5λ/NA to distance ROI when the...

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Bibliographic Details
Main Authors Mukherjee, Maharaj, Culp, James A, Mansfield, Scott M, Lai, Kafai, Rosenbluth, Alan E
Format Patent
LanguageEnglish
Published 17.04.2012
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Summary:A method is provided for modeling lithographic processes in the design of photomasks for the manufacture of semiconductor integrated circuits, and more particularly for simulating intermediate range flare effects. For a region of influence (ROI) from first ROI of about 5λ/NA to distance ROI when the point spread function has a slope that is slowly varying according to a predetermined criterion, then mask shapes at least within the distance range from ROI to ROI are smoothed prior to computing the SOCS convolutions. The method provides a fast method for simulating intermediate range flare effects with sufficient accuracy.