Reduction of defects formed on the surface of a silicon oxynitride film

Methods for reducing defects on the surface of a silicon oxynitride film are disclosed, in one embodiment, the methods include, forming a silicon oxynitride film on a semiconductor substrate and heating the silicon oxynitride film to increase a hydrophilicity of a surface of the silicon oxynitride f...

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Main Author Yokonaga, Noriyuki
Format Patent
LanguageEnglish
Published 17.04.2012
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Abstract Methods for reducing defects on the surface of a silicon oxynitride film are disclosed, in one embodiment, the methods include, forming a silicon oxynitride film on a semiconductor substrate and heating the silicon oxynitride film to increase a hydrophilicity of a surface of the silicon oxynitride film prior to treating the surface of the silicon oxynitride film with a hydrofluoric acid.
AbstractList Methods for reducing defects on the surface of a silicon oxynitride film are disclosed, in one embodiment, the methods include, forming a silicon oxynitride film on a semiconductor substrate and heating the silicon oxynitride film to increase a hydrophilicity of a surface of the silicon oxynitride film prior to treating the surface of the silicon oxynitride film with a hydrofluoric acid.
Author Yokonaga, Noriyuki
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References Olsen (2008/0090425) 20080400
Sakama et al. (2007/0029626) 20070200
Muranaka (8017455) 20110900
Hatori et al. (2006/0057793) 20060300
Chua et al. (2008/0119057) 20080500
Umezawa (2005/0186803) 20050800
Maes et al. (2006/0180879) 20060800
Tsunoda (2008/0090378) 20080400
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Snippet Methods for reducing defects on the surface of a silicon oxynitride film are disclosed, in one embodiment, the methods include, forming a silicon oxynitride...
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Title Reduction of defects formed on the surface of a silicon oxynitride film
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