Reduction of defects formed on the surface of a silicon oxynitride film

Methods for reducing defects on the surface of a silicon oxynitride film are disclosed, in one embodiment, the methods include, forming a silicon oxynitride film on a semiconductor substrate and heating the silicon oxynitride film to increase a hydrophilicity of a surface of the silicon oxynitride f...

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Bibliographic Details
Main Author Yokonaga, Noriyuki
Format Patent
LanguageEnglish
Published 17.04.2012
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Summary:Methods for reducing defects on the surface of a silicon oxynitride film are disclosed, in one embodiment, the methods include, forming a silicon oxynitride film on a semiconductor substrate and heating the silicon oxynitride film to increase a hydrophilicity of a surface of the silicon oxynitride film prior to treating the surface of the silicon oxynitride film with a hydrofluoric acid.