Relaxed InGaN/AlGaN templates

A relaxed InGaN template employs a GaN or InGaN nucleation layer grown at low temperatures on a conventional base layer (e.g., sapphire). The nucleation layer is typically very rough and multi-crystalline. A single-crystal InGaN buffer layer is then grown at normal temperatures. Although not necessa...

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Bibliographic Details
Main Authors Chua, Christopher L, Yang, Zhihong, Strittmatter, Andre, Teepe, Mark R
Format Patent
LanguageEnglish
Published 27.03.2012
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Summary:A relaxed InGaN template employs a GaN or InGaN nucleation layer grown at low temperatures on a conventional base layer (e.g., sapphire). The nucleation layer is typically very rough and multi-crystalline. A single-crystal InGaN buffer layer is then grown at normal temperatures. Although not necessary, the buffer layer is typically undoped, and is usually grown at high pressures to encourage planarization and to improve surface smoothness. A subsequent n-doped cap layer can then be grown at low pressures to form the n-contact of a photonic or electronic device. In some cases, a wetting layer-typically low temperature AlN-is grown prior to the nucleation layer. Other templates, such as AlGaN on Si or SiC, are also produced using the method of the present invention.