Metal fill structures for reducing parasitic capacitance

Vertically-staggered-level metal fill structures include inner contiguous metal fill structures and outer contiguous metal fill structures. A dielectric material portion is provided between each contiguous metal fill structure. Vertical extent of each contiguous metal fill structure is limited up to...

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Bibliographic Details
Main Authors Collins, David S, Landis, Howard S, Stamper, Anthony K, Wilson, Janet M
Format Patent
LanguageEnglish
Published 20.03.2012
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Summary:Vertically-staggered-level metal fill structures include inner contiguous metal fill structures and outer contiguous metal fill structures. A dielectric material portion is provided between each contiguous metal fill structure. Vertical extent of each contiguous metal fill structure is limited up to three vertically adjoining metal interconnect levels, thereby limiting the capacitance of each contiguous metal fill structure. Capacitive coupling between the contiguous metal fill structures and the metal interconnect structures is minimized due to the fragmented structure of contiguous metal fill structures.