Quantum well GaP/Si tandem photovoltaic cells

Two junction solar energy conversion devices, i.e. photovoltaic cells have a bottom silicon N+/P/P+ photovoltaic cell and an upper GaP N+/P/P+ photovoltaic cell containing quantum well layers which extend the wavelength range over which the GaP cell absorbs light. The quantum well layers are compose...

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Bibliographic Details
Main Author Hovel, Harold J
Format Patent
LanguageEnglish
Published 24.01.2012
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Summary:Two junction solar energy conversion devices, i.e. photovoltaic cells have a bottom silicon N+/P/P+ photovoltaic cell and an upper GaP N+/P/P+ photovoltaic cell containing quantum well layers which extend the wavelength range over which the GaP cell absorbs light. The quantum well layers are composed of materials other than Gallium Phosphide (GaP) and may be either pseudomorphic or metamorphic. Light trapping may be incorporated at the top surface of the GaP photovoltaic cell along with anti-reflective coatings, and light trapping may be incorporated on the bottom surface of the silicon cell. The bottom surface of the silicon photovoltaic cell is coated with a passivating dielectric layer and electrical contact to the silicon is made with conductive vias extending through the passivating layer.