Wafer-level In-P Si bonding for silicon photonic apparatus

Wafer-level bonding of the hybrid laser portion of a silicon photonics platform is done by forming a weakened level in a semiconductive pillar that supports laser-active layers by ion implantation into the semiconductive pillar without penetrating the laser-active layers, and by separating the laser...

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Bibliographic Details
Main Authors Heck, John, Jones, Richard, Sysak, Matthew N
Format Patent
LanguageEnglish
Published 27.12.2011
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Summary:Wafer-level bonding of the hybrid laser portion of a silicon photonics platform is done by forming a weakened level in a semiconductive pillar that supports laser-active layers by ion implantation into the semiconductive pillar without penetrating the laser-active layers, and by separating the laser-active layers from the semiconductive pillar by cracking the weakened level by an epitaxial lift-off processes.