Methods of patterning insulating layers using etching techniques that compensate for etch rate variations

Methods of forming integrated circuit devices include forming an integrated circuit substrate having an electrically insulating layer thereon and forming a mask layer pattern having at least first and second openings of different size therein, on the electrically insulating layer. First and second p...

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Bibliographic Details
Main Authors Park, Wan-jae, Kumar, Kaushik Arun, Linville, Joseph Edward, Lisi, Anthony David, Srivastava, Ravi Prakash, Wendt, Hermann Willhelm
Format Patent
LanguageEnglish
Published 15.11.2011
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