EEPROM devices and methods of operating and fabricating the same

An electrically erasable and programmable read-only memory (EEPROM) is provided. The EEPROM includes a semiconductor substrate including spaced apart first, second and third active regions, a common floating gate traversing over the first through third active regions, source/drain regions formed in...

Full description

Saved in:
Bibliographic Details
Main Authors Park, Geun-sook, Yi, Sang-bae, Lee, Soo-cheol, Hwang, Ho-ik, Lee, Tae-jung
Format Patent
LanguageEnglish
Published 01.11.2011
Online AccessGet full text

Cover

More Information
Summary:An electrically erasable and programmable read-only memory (EEPROM) is provided. The EEPROM includes a semiconductor substrate including spaced apart first, second and third active regions, a common floating gate traversing over the first through third active regions, source/drain regions formed in the third active region on opposite sides of the floating gate, a first interconnect connected to the first active region, a second interconnect connected to the second active region, and a third interconnect connected to either one of the source/drain regions.