Semiconductor device with gate-undercutting recessed region
A semiconductor device comprises a gate structure on a semiconductor substrate and a recessed region in the semiconductor substrate. The recessed region has a widest lateral opening that is near a top surface of the semiconductor substrate. The widest lateral opening undercuts the gate structure.
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| Main Authors | , , |
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| Format | Patent |
| Language | English |
| Published |
01.11.2011
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| Online Access | Get full text |
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| Abstract | A semiconductor device comprises a gate structure on a semiconductor substrate and a recessed region in the semiconductor substrate. The recessed region has a widest lateral opening that is near a top surface of the semiconductor substrate. The widest lateral opening undercuts the gate structure. |
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| AbstractList | A semiconductor device comprises a gate structure on a semiconductor substrate and a recessed region in the semiconductor substrate. The recessed region has a widest lateral opening that is near a top surface of the semiconductor substrate. The widest lateral opening undercuts the gate structure. |
| Author | Hurd, Trace Q Koontz, Elisabeth Marley Pacheco Rotondaro, Antonio Luis |
| Author_xml | – sequence: 1 givenname: Antonio Luis surname: Pacheco Rotondaro fullname: Pacheco Rotondaro, Antonio Luis – sequence: 2 givenname: Trace Q surname: Hurd fullname: Hurd, Trace Q – sequence: 3 givenname: Elisabeth Marley surname: Koontz fullname: Koontz, Elisabeth Marley |
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| References | Keating et al. (2005/0148147) 20050700 Lindert et al. (6946350) 20050900 Bryant et al. (2007/0111417) 20070500 Lee et al. (2005/0045969) 20050300 Forbes (7153753) 20061200 Bohr et al. (2007/0004123) 20070100 |
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| Snippet | A semiconductor device comprises a gate structure on a semiconductor substrate and a recessed region in the semiconductor substrate. The recessed region has a... |
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| Title | Semiconductor device with gate-undercutting recessed region |
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