Semiconductor device with gate-undercutting recessed region

A semiconductor device comprises a gate structure on a semiconductor substrate and a recessed region in the semiconductor substrate. The recessed region has a widest lateral opening that is near a top surface of the semiconductor substrate. The widest lateral opening undercuts the gate structure.

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Bibliographic Details
Main Authors Pacheco Rotondaro, Antonio Luis, Hurd, Trace Q, Koontz, Elisabeth Marley
Format Patent
LanguageEnglish
Published 01.11.2011
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Summary:A semiconductor device comprises a gate structure on a semiconductor substrate and a recessed region in the semiconductor substrate. The recessed region has a widest lateral opening that is near a top surface of the semiconductor substrate. The widest lateral opening undercuts the gate structure.