Phase change memory device having phase change material layer containing phase change nano particles

A phase change memory device including a phase change material layer having phase change nano particles and a method of fabricating the same are provided. The phase change memory device may include a first electrode and a second electrode facing each other, a phase change material layer containing p...

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Bibliographic Details
Main Authors Khang, Yoon-Ho, Jo, Wil-Liam, Suh, Dong-Seok
Format Patent
LanguageEnglish
Published 01.11.2011
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Summary:A phase change memory device including a phase change material layer having phase change nano particles and a method of fabricating the same are provided. The phase change memory device may include a first electrode and a second electrode facing each other, a phase change material layer containing phase change nano particles interposed between the first electrode and the second electrode and/or a switching device electrically connected to the first electrode. The phase change material layer may include an insulating material.