Method of forming trench-gate field effect transistors

A method of forming a field effect transistor includes: forming a trench in a semiconductor region; forming a shield electrode in the trench; performing an angled sidewall implant of impurities of the first conductivity type to form a channel enhancement region adjacent the trench; forming a body re...

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Main Authors Yilmaz, Hamza, Calafut, Daniel, Kocon, Christopher Boguslaw, Sapp, Steven P, Probst, Dean E, Kraft, Nathan L, Grebs, Thomas E, Ridley, Rodney S, Dolny, Gary M, Marchant, Bruce D, Yedinak, Joseph A
Format Patent
LanguageEnglish
Published 25.10.2011
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Summary:A method of forming a field effect transistor includes: forming a trench in a semiconductor region; forming a shield electrode in the trench; performing an angled sidewall implant of impurities of the first conductivity type to form a channel enhancement region adjacent the trench; forming a body region of a second conductivity type in the semiconductor region; and forming a source region of the first conductivity type in the body region, the source region and an interface between the body region and the semiconductor region defining a channel region therebetween, the channel region extending along the trench sidewall. The channel enhancement region partially extends into a lower portion of the channel region to thereby reduce a resistance of the channel region.