Multilayered semiconductor wafer and process for manufacturing the same

• Main Authors: Murphy, Brian, Wahlich, Reinhold
• Format: Patent
• Language: English
• Published: 18.10.2011

The invention relates to a process for manufacturing a multilayered semiconductor wafer comprising a handle wafer and a layer comprising silicon carbide bonded to the handle wafer, the process comprising the steps of: a) providing a handle wafer, b) providing a donor wafer comprising a donor layer and a remainder of the donor wafer, the donor layer comprising monocrystalline silicon, e) bonding the donor layer of the donor wafer to the handle wafer, and f) removing the remainder of the donor wafer in order to expose the donor layer which remains bonded to the handle wafer, the process being characterized by further steps of c) implanting carbon ions into the donor layer in order to produce a layer comprising implanted carbon, and d) heat-treating the donor layer comprising the layer comprising implanted carbon in order to form a silicon carbide donor layer in at least part of the donor layer. The invention also relates to a multilayered semiconductor wafer comprising a handle wafer and a silicon carbide donor layer which is bonded to the handle wafer, wherein the silicon carbide donor layer is free of twins and free of additional silicon carbide polytypes, as determined by X-ray diffraction.