Through-silicon via structures including conductive protective layers

Through-Silicon-Via (TSV) structures can include a conductive via through a substrate extending from an upper surface of the substrate to a backside surface of the substrate opposite the upper surface, a conductive protective layer including Ni and/or Co can be at a bottom of the conductive via, and...

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Bibliographic Details
Main Authors Yoon, Minseung, Kim, Namseog, Kim, Pyoungwan, Ma, Keumhee, Jo, Chajea
Format Patent
LanguageEnglish
Published 27.09.2011
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Summary:Through-Silicon-Via (TSV) structures can include a conductive via through a substrate extending from an upper surface of the substrate to a backside surface of the substrate opposite the upper surface, a conductive protective layer including Ni and/or Co can be at a bottom of the conductive via, and a separate polymer insulating layer can be on the backside surface of the substrate in contact with the conductive protective layer.