Method of annealing a dielectric layer

A method includes forming a first dielectric layer over a substrate; forming nanoclusters over the first dielectric layer; forming a second dielectric layer over the nanoclusters; annealing the second dielectric layer using nitrous oxide; and after the annealing the second dielectric layer, forming...

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Bibliographic Details
Main Authors Shen, Jinmiao J, Hong, Cheong M, Kang, Sung-Taeg, Rossow, Marc A
Format Patent
LanguageEnglish
Published 20.09.2011
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Summary:A method includes forming a first dielectric layer over a substrate; forming nanoclusters over the first dielectric layer; forming a second dielectric layer over the nanoclusters; annealing the second dielectric layer using nitrous oxide; and after the annealing the second dielectric layer, forming a gate electrode over the second dielectric layer.