Double-sided integrated circuit chips

A double-sided integrated circuit chips, methods of fabricating the double-sided integrated circuit chips and design structures for double-sided integrated circuit chips. The method includes removing the backside silicon from two silicon-on-insulator wafers having devices fabricated therein and bond...

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Bibliographic Details
Main Authors Bernstein, Kerry, Dalton, Timothy Joseph, Gambino, Jeffrey Peter, Jaffe, Mark David, Kartschoke, Paul David, Luce, Stephen Ellinwood, Stamper, Anthony Kendall
Format Patent
LanguageEnglish
Published 06.09.2011
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Summary:A double-sided integrated circuit chips, methods of fabricating the double-sided integrated circuit chips and design structures for double-sided integrated circuit chips. The method includes removing the backside silicon from two silicon-on-insulator wafers having devices fabricated therein and bonding them back to back utilizing the buried oxide layers. Contacts are then formed in the upper wafer to devices in the lower wafer and wiring levels are formed on the upper wafer. The lower wafer may include wiring levels. The lower wafer may include landing pads for the contacts. Contacts to the silicon layer of the lower wafer may be silicided.