Manufacturing method of semiconductor device

A semiconductor device manufacturing method includes forming an interlayer dielectric film above a semiconductor substrate; forming a first wiring trench with a first width and a second wiring trench with a second width that is larger than the first width inr the interlayer dielectric film; forming...

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Bibliographic Details
Main Authors Sunayama, Michie, Shimizu, Noriyoshi
Format Patent
LanguageEnglish
Published 23.08.2011
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Summary:A semiconductor device manufacturing method includes forming an interlayer dielectric film above a semiconductor substrate; forming a first wiring trench with a first width and a second wiring trench with a second width that is larger than the first width inr the interlayer dielectric film; forming a first seed layer that includes a first additional element in the first wiring trench and the second wiring trench; forming a first copper layer over the first seed layer; removing the first copper layer and the first seed layer in the second wiring trench while leaving the first copper layer and the first seed layer in the first wiring trench; forming a second seed layer in the second wiring trench after removing the first copper layer and the first seed layer in the second wiring trench; and forming a second copper layer over the second seed layer.