Method for producing strained Si-SOI substrate and strained Si-SOI substrate produced by the same

A strained Si-SOI substrate, and a method for producing the same are provided, wherein the method includes the steps of growing a SiGe mixed crystal layer on an SOI substrate having an Si layer and a buried oxide film ; forming protective films on the surface of the SiGe mixed crystal layer ; implan...

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Bibliographic Details
Main Authors Ninomiya, Masaharu, Matsumoto, Koji, Nakamae, Masahiko, Miyao, Masanobu
Format Patent
LanguageEnglish
Published 12.07.2011
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Summary:A strained Si-SOI substrate, and a method for producing the same are provided, wherein the method includes the steps of growing a SiGe mixed crystal layer on an SOI substrate having an Si layer and a buried oxide film ; forming protective films on the surface of the SiGe mixed crystal layer ; implanting light element ions into a vicinity of the interface between the Si layer and the buried oxide film ; performing a first heat treatment at a temperature in the range of 400 to 1000° C.; performing a second heat treatment at a temperature not lower than 1050° C. under an oxidizing atmosphere; performing a third heat treatment at a temperature not lower than 1050° C. under an inert atmosphere; removing the Si oxide film formed on the surface; and forming a strained Si layer