Plasma reactor for processing a workpiece and having a tunable cathode

A plasma reactor is provided for processing a workpiece such as a transparent mask or a semiconductor wafer. The reactor includes a vacuum chamber having a ceiling and a sidewall. A workpiece support pedestal within the chamber includes a metal cathode having a support surface facing the ceiling and...

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Bibliographic Details
Main Authors Lewington, Richard, Grimbergen, Michael N, Nguyen, Khiem K, Bivens, Darin, Chandrachood, Madhavi R, Kumar, Ajay
Format Patent
LanguageEnglish
Published 28.06.2011
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Summary:A plasma reactor is provided for processing a workpiece such as a transparent mask or a semiconductor wafer. The reactor includes a vacuum chamber having a ceiling and a sidewall. A workpiece support pedestal within the chamber includes a metal cathode having a support surface facing the ceiling and defining a support plane for supporting a workpiece. The cathode has a hollow space formed within its interior. The reactor further includes a movable metal element within the hollow space and a mechanism for controlling a distance between the metal element and the support plane.