Hybrid semiconductor structure

A method for the fabrication of a semiconductor structure that includes areas that have different crystalline orientation and semiconductor structure formed thereby. The disclosed method allows fabrication of a semiconductor structure that has areas of different semiconducting materials. The method...

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Bibliographic Details
Main Authors Bjoerk, Mikael T, Hayden, Oliver, Riel, Heike E, Riess, Walter Heinrich, Schmid, Heinz
Format Patent
LanguageEnglish
Published 24.05.2011
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Summary:A method for the fabrication of a semiconductor structure that includes areas that have different crystalline orientation and semiconductor structure formed thereby. The disclosed method allows fabrication of a semiconductor structure that has areas of different semiconducting materials. The method employs templated crystal growth using a Vapor-Liquid-Solid (VLS) growth process. A silicon semiconductor substrate having a first crystal orientation direction is etched to have an array of holes into its surface. A separation layer is formed on the inner surface of the hole for appropriate applications. A growth catalyst is placed at the bottom of the hole and a VLS crystal growth process is initiated to form a nanowire. The resultant nanowire crystal has a second different crystal orientation which is templated by the geometry of the hole.