Split gate non-volatile memory cell
A non-volatile memory (NVM) cell comprising a layer of discrete charge storing elements, a control gate, and a select gate is provided. The control gate has a first sidewall with a lower portion being at least a first angle 10 degrees away from 90 degrees with respect to substrate. Further, the sele...
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Main Authors | , |
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Format | Patent |
Language | English |
Published |
10.05.2011
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Online Access | Get full text |
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Summary: | A non-volatile memory (NVM) cell comprising a layer of discrete charge storing elements, a control gate, and a select gate is provided. The control gate has a first sidewall with a lower portion being at least a first angle 10 degrees away from 90 degrees with respect to substrate. Further, the select gate has a second sidewall with a lower portion being at least a second angle at least 10 degrees away from 90 degrees with respect to the substrate. The NVM cell further comprises a layer of dielectric material located between the first sidewall and the second sidewall. |
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