Wafer bonding activated by ion implantation

A method for wafer bonding two substrates activated by ion implantation is disclosed. An in situ ion bonding chamber allows ion activation and bonding to occur within an existing process tool utilized in a manufacturing process line. Ion activation of at least one of the substrates is performed at l...

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Bibliographic Details
Main Authors Erokhin, Yuri, Sullivan, Paul, Walther, Steven R, Nunan, Peter
Format Patent
LanguageEnglish
Published 10.05.2011
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Summary:A method for wafer bonding two substrates activated by ion implantation is disclosed. An in situ ion bonding chamber allows ion activation and bonding to occur within an existing process tool utilized in a manufacturing process line. Ion activation of at least one of the substrates is performed at low implant energies to ensure that the wafer material below the thin surface layers remains unaffected by the ion activation.