Structure including transistor having gate and body in direct self-aligned contact

A design structure including a transistor having a directly contacting gate and body is disclosed. In one embodiment, the transistor includes a gate; a body; and a dielectric layer extending over the body to insulate the gate from the body along an entire surface of the body except along a portion o...

Full description

Saved in:
Bibliographic Details
Main Authors Anderson, Brent A, Bryant, Andres, Clark, Jr, William F, Nowak, Edward J
Format Patent
LanguageEnglish
Published 03.05.2011
Online AccessGet full text

Cover

More Information
Summary:A design structure including a transistor having a directly contacting gate and body is disclosed. In one embodiment, the transistor includes a gate; a body; and a dielectric layer extending over the body to insulate the gate from the body along an entire surface of the body except along a portion of at least a sidewall of the body, wherein the gate is in direct contact with the body at the portion.