RuO

0.8 0.8 0.8 0.8 A structure including a TiW oxygen plasma mask, a photoresist mask above and in contact with the TiW oxygen plasma mask, a 2000 angstrom thick oxygen plasma vaporizable RuOelectrode layer partially under and in contact with the TiW oxygen plasma mask, the RuOelectrode layer not being...

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Bibliographic Details
Main Authors Collins, Steven R, Toure, Abron S, Bernstein, Steven D
Format Patent
LanguageEnglish
Published 12.04.2011
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Summary:0.8 0.8 0.8 0.8 A structure including a TiW oxygen plasma mask, a photoresist mask above and in contact with the TiW oxygen plasma mask, a 2000 angstrom thick oxygen plasma vaporizable RuOelectrode layer partially under and in contact with the TiW oxygen plasma mask, the RuOelectrode layer not being completely covered by a pattern of the TiW oxygen plasma mask, a first side of a PZT ferroelectric layer in contact with the RuOelectrode layer and a second RuOelectrode layer in contact with a second side of the PZT ferroelectric layer.