TFT substrate for display device with a semiconductor layer that extends beyond the gate electrode structure and manufacturing method of the same

Disclosed is a TFT substrate for a display apparatus comprising a gate wiring including a gate electrode, a data wiring including a data line, a source electrode connected to the data line, and a drain electrode connected to a pixel electrode, and a semiconductor layer disposed between the gate wiri...

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Bibliographic Details
Main Authors Na, Byoung-sun, Kwak, Sang-ki, Kim, Dong-gyu, Lee, Kyung-phil
Format Patent
LanguageEnglish
Published 12.04.2011
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Summary:Disclosed is a TFT substrate for a display apparatus comprising a gate wiring including a gate electrode, a data wiring including a data line, a source electrode connected to the data line, and a drain electrode connected to a pixel electrode, and a semiconductor layer disposed between the gate wiring and the data wiring, wherein the semiconductor layer under the drain electrode is disposed within an area overlapping the gate electrode and the semiconductor layer under the source electrode extends outward to an area not overlapping the gate electrode. Advantageously, the present disclosure provides a TFT substrate for a display apparatus having a high aperture ratio and causing less afterimaging, and a manufacturing method of the same.