Method for manufacturing a semiconductor device
A method for manufacturing a semiconductor device includes providing a semiconductor substrate including a first surface and a second surface which is arranged opposite to the first surface. The semiconductor substrate includes a plurality of trench structures extending from the first surface into t...
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| Format | Patent |
| Language | English |
| Published |
12.04.2011
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| Online Access | Get full text |
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| Summary: | A method for manufacturing a semiconductor device includes providing a semiconductor substrate including a first surface and a second surface which is arranged opposite to the first surface. The semiconductor substrate includes a plurality of trench structures extending from the first surface into the semiconductor substrate. The thickness of the semiconductor substrate is then reduced by removing semiconductor material at the second surface to obtain a processed second surface with exposed bottom portions of the trench structures. At least a first mask is formed on the processed second surface in a self-aligned manner with respect to the bottom portions of the trench structures, and doping regions are formed in the semiconductor substrate between the trench structures. |
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