N2 based plasma treatment for enhanced sidewall smoothing and pore sealing of porous low-k dielectric films
A method of forming a semiconductor device including forming a low-k dielectric material over a substrate, depositing a liner on a portion of the low-k dielectric material, and exposing the liner to a plasma. The method also includes depositing a layer over the liner.
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Main Authors | , , |
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Format | Patent |
Language | English |
Published |
22.03.2011
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Online Access | Get full text |
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Summary: | A method of forming a semiconductor device including forming a low-k dielectric material over a substrate, depositing a liner on a portion of the low-k dielectric material, and exposing the liner to a plasma. The method also includes depositing a layer over the liner. |
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