N2 based plasma treatment for enhanced sidewall smoothing and pore sealing of porous low-k dielectric films

A method of forming a semiconductor device including forming a low-k dielectric material over a substrate, depositing a liner on a portion of the low-k dielectric material, and exposing the liner to a plasma. The method also includes depositing a layer over the liner.

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Bibliographic Details
Main Authors Ajmera, Sameer Kumar, Smith, Patricia Beauregard, Jin, Changming
Format Patent
LanguageEnglish
Published 22.03.2011
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Summary:A method of forming a semiconductor device including forming a low-k dielectric material over a substrate, depositing a liner on a portion of the low-k dielectric material, and exposing the liner to a plasma. The method also includes depositing a layer over the liner.