Abrupt "delta-like" doping in Si and SiGe films by UHV-CVD

19 19 A structure and method of forming an abrupt doping profile is described incorporating a substrate, a first epitaxial layer of Ge less than the critical thickness having a P or As concentration greater than 5×10atoms/cc, and a second epitaxial layer having a change in concentration in its first...

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Bibliographic Details
Main Authors Cardone, Frank, Chu, Jack Oon, Ismail, Khalid EzzEldin
Format Patent
LanguageEnglish
Published 15.03.2011
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Summary:19 19 A structure and method of forming an abrupt doping profile is described incorporating a substrate, a first epitaxial layer of Ge less than the critical thickness having a P or As concentration greater than 5×10atoms/cc, and a second epitaxial layer having a change in concentration in its first 40 from the first layer of greater than 1×10P atoms/cc. Alternatively, a layer of SiGe having a Ge content greater than 0.5 may be selectively amorphized and recrystalized with respect to other layers in a layered structure. The invention overcomes the problem of forming abrupt phosphorus profiles in Si and SiGe layers or films in semiconductor structures such as CMOS, MODFET's, and HBT's.