System and method for providing a high frequency response silicon photodetector

A Silicon photodetector contains an insulating substrate having a top surface and a bottom surface. A Silicon layer is located on the top surface of the insulating substrate, where the Silicon layer contains a center region, the center region being larger in thickness than the rest of the Silicon la...

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Main Authors Geis, Michael W, Spector, Steven J, Lennon, Donna M, Grein, Matthew E, Schulein, Robert T, Yoon, Jung U, Kaertner, Franz Xaver, Gan, Fuwan, Lyszczarz, Theodore M
Format Patent
LanguageEnglish
Published 01.02.2011
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Summary:A Silicon photodetector contains an insulating substrate having a top surface and a bottom surface. A Silicon layer is located on the top surface of the insulating substrate, where the Silicon layer contains a center region, the center region being larger in thickness than the rest of the Silicon layer. A top Silicon dioxide layer is located on a top surface of the center region. A left wing of the center region and a right wing of the center region are doped. The Silicon photodetector also has an active region located within the center region, where the active region contains a tailored crystal defect-impurity combination and Oxygen atoms.