Integrated semiconductor optical device

18 −3 A semiconductor laser (a first semiconductor optical device) and an optical modulator (a second semiconductor optical device) are integrated on the same n-type InP substrate. The semiconductor laser butt-joined to the optical modulator. Each of the semiconductor laser and the optical modulator...

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Bibliographic Details
Main Authors Yamatoya, Takeshi, Watatani, Chikara
Format Patent
LanguageEnglish
Published 25.01.2011
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Summary:18 −3 A semiconductor laser (a first semiconductor optical device) and an optical modulator (a second semiconductor optical device) are integrated on the same n-type InP substrate. The semiconductor laser butt-joined to the optical modulator. Each of the semiconductor laser and the optical modulator has a Be-doped p-type InGaAs contact layer. The p-type InGaAs contact layers have a Be-doping concentration of 7×10cmor more, and a thickness of 300 nm or less.