Semiconductor structure having selective silicide-induced stress and a method of producing same

The channel of a MOSFET is selectively stressed by selectively stressing the silicide layers on the gate electrode and the source/drain. Stress in the silicide layer is selectively produced by orienting the larger dimensions of the silicide grains in a first direction and the smaller dimensions in a...

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Bibliographic Details
Main Authors Ke, Chung-Hu, Lee, Wen-Chin, Hu, Chenming
Format Patent
LanguageEnglish
Published 25.01.2011
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Summary:The channel of a MOSFET is selectively stressed by selectively stressing the silicide layers on the gate electrode and the source/drain. Stress in the silicide layer is selectively produced by orienting the larger dimensions of the silicide grains in a first direction and the smaller dimensions in a second, perpendicular direction, with one of the directions being parallel to the direction of carrier movement in the channel and the other direction being perpendicular thereto.